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IRF9410
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
30
–––
–––
–––
0.024
0.024
––– V V GS = 0V, I D = 250μA
––– V/°C Reference to 25°C, I D = 1mA
0.030 V GS = 10V, I D = 7.0A ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
0.032
0.040
?
V GS = 5.0V, I D = 4.0A ?
–––
0.037
0.050 V GS = 4.5V, I D = 3.5A ?
46 R G = 6.0 ?, V GS = 10V
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
–––
–––
–––
18
2.4
4.9
7.3
8.3
23
17
550
260
100
––– V V DS = V GS , I D = 250μA
––– S V DS = 15V, I D = 7.0A
2.0 V DS = 24V, V GS = 0V
μA
25 V DS = 24V, V GS = 0V, T J = 55°C
100 V GS = 20V
nA
-100 V GS = -20V
27 I D = 2.0A
3.6 nC V DS = 15V
7.4 V GS = 10V, See Fig. 10 ?
15 V DD = 25V
17 I D = 1.0A
ns
34 R D = 25 ? ?
––– V GS = 0V
––– pF V DS = 25V
––– ? = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
–––
–––
–––
–––
2.8
37
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– 0.78
––– 40
––– 63
1.0
80
130
V
ns
nC
T J = 25°C, I S = 2.0A, V GS = 0V ?
T J = 25°C, I F = 2.0A
di/dt = 100A/μs ?
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 6.6mH
R G = 25 ? , I AS = 4.6A.
? Surface mounted on FR-4 board, t ≤ 10sec.
? I SD ≤ 4.6A, di/dt ≤ 120A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
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